• DocumentCode
    1025100
  • Title

    Injection-locked operation of a 20-element coupled-stripe laser array

  • Author

    Goldberg, L. ; Weller, J.F.

  • Author_Institution
    Naval Research Laboratory, Washington, USA
  • Volume
    22
  • Issue
    16
  • fYear
    1986
  • Firstpage
    858
  • Lastpage
    859
  • Abstract
    Single far-field lobe and single-mode operation of a 20-element GaAlAs gain-guided coupled-stripe array with 315 mW of output was obtained by injection locking with 3.9 mW of incident power. The 0.31° lobe width was near the diffraction limit. An external small-signal gain of 19 dB was obtained.
  • Keywords
    III-V semiconductors; aluminium compounds; gallium arsenide; semiconductor junction lasers; coupled-stripe laser array; external small-signal gain; far-field lobe; incident power; injection locking; lobe width; output power; single-mode operation;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19860587
  • Filename
    4256792