DocumentCode
1025100
Title
Injection-locked operation of a 20-element coupled-stripe laser array
Author
Goldberg, L. ; Weller, J.F.
Author_Institution
Naval Research Laboratory, Washington, USA
Volume
22
Issue
16
fYear
1986
Firstpage
858
Lastpage
859
Abstract
Single far-field lobe and single-mode operation of a 20-element GaAlAs gain-guided coupled-stripe array with 315 mW of output was obtained by injection locking with 3.9 mW of incident power. The 0.31° lobe width was near the diffraction limit. An external small-signal gain of 19 dB was obtained.
Keywords
III-V semiconductors; aluminium compounds; gallium arsenide; semiconductor junction lasers; coupled-stripe laser array; external small-signal gain; far-field lobe; incident power; injection locking; lobe width; output power; single-mode operation;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19860587
Filename
4256792
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