Title :
Injection-locked operation of a 20-element coupled-stripe laser array
Author :
Goldberg, L. ; Weller, J.F.
Author_Institution :
Naval Research Laboratory, Washington, USA
Abstract :
Single far-field lobe and single-mode operation of a 20-element GaAlAs gain-guided coupled-stripe array with 315 mW of output was obtained by injection locking with 3.9 mW of incident power. The 0.31° lobe width was near the diffraction limit. An external small-signal gain of 19 dB was obtained.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; semiconductor junction lasers; coupled-stripe laser array; external small-signal gain; far-field lobe; incident power; injection locking; lobe width; output power; single-mode operation;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19860587
