Title :
High-efficiency power 2DEGFETS based on a surface undoped layer n-AlGaAs/GaAs selectively doped structure for Ka-band
Author :
Hida, Hirotaka ; Akiba, Y. ; Suzuki, Yuya ; Toyoshima, Hisashi ; Ohata, Katsuki
Author_Institution :
NEC Corporation, Microelectronics Research Laboratories, Kawasaki, Japan
Abstract :
We have evaluated the power performance of surface undoped structure n-AlGaAs/GaAs 2DEGFETs at Ka-band. This unique configuration 2DEGFET with a 0.5 ¿m gate length showed a 143 W/mm output power at 28.5 GHz. Furthermore, 7 dB linear gain and 21% power-added efficiency were attained, which are the best data in the Ka-band frequency range reported to date.
Keywords :
III-V semiconductors; aluminium compounds; field effect transistors; gallium arsenide; power transistors; solid-state microwave devices; 2DEGFETs; Ka-band; gate length; linear gain; output power; power performance; power-added efficiency; surface undoped structure;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19860590
