Title :
Channelled-substrate buried-heterostructure InGaAsP/InP laser with semi-insulating OMVPE base structure and LPE regrowth
Author :
Wilt, D.P. ; Long, Jiang ; Dautremont-Smith, W.C. ; Focht, M.W. ; Shen, T.M. ; Hartman, R.L.
Author_Institution :
AT&T Bell Laboratories, Murray Hill, USA
Abstract :
A channelled-substrate buried-heterostructure InGaAsP/InP laser is demonstrated which uses a semi-insulating InP base structure current confinement layer formed by OMVPE. Pulsed threshold currents as low as 14 mA and median aging rate under 60°C, 3 mW per facet burn-in conditions of 1% per thousand hours have been measured. A bandwidth greater than 4 GHz and modulation at rates as high as 20 Gbit/s have been achieved.
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; liquid phase epitaxial growth; semiconductor junction lasers; vapour phase epitaxial growth; III-V semiconductors; LPE regrowth; bandwidth; burn-in conditions; channelled-substrate buried-heterostructure; median aging rate; modulation; pulsed threshold currents; semi-insulating OMVPE base structure; structure current confinement layer;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19860594
