• DocumentCode
    1025161
  • Title

    Channelled-substrate buried-heterostructure InGaAsP/InP laser with semi-insulating OMVPE base structure and LPE regrowth

  • Author

    Wilt, D.P. ; Long, Jiang ; Dautremont-Smith, W.C. ; Focht, M.W. ; Shen, T.M. ; Hartman, R.L.

  • Author_Institution
    AT&T Bell Laboratories, Murray Hill, USA
  • Volume
    22
  • Issue
    16
  • fYear
    1986
  • Firstpage
    869
  • Lastpage
    870
  • Abstract
    A channelled-substrate buried-heterostructure InGaAsP/InP laser is demonstrated which uses a semi-insulating InP base structure current confinement layer formed by OMVPE. Pulsed threshold currents as low as 14 mA and median aging rate under 60°C, 3 mW per facet burn-in conditions of 1% per thousand hours have been measured. A bandwidth greater than 4 GHz and modulation at rates as high as 20 Gbit/s have been achieved.
  • Keywords
    III-V semiconductors; gallium arsenide; indium compounds; liquid phase epitaxial growth; semiconductor junction lasers; vapour phase epitaxial growth; III-V semiconductors; LPE regrowth; bandwidth; burn-in conditions; channelled-substrate buried-heterostructure; median aging rate; modulation; pulsed threshold currents; semi-insulating OMVPE base structure; structure current confinement layer;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19860594
  • Filename
    4256799
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1025161