• DocumentCode
    1025192
  • Title

    Gain Studies on Quantum-Dot Lasers With Temperature-Stable Emission Wavelength

  • Author

    Debusmann, Ralph ; Schlereth, Thomas W. ; Gerhard, Sven ; Kaiser, Wolfgang ; Höfling, Sven ; Forchel, Alfred

  • Author_Institution
    Univ. Wurzburg, Wurzburg
  • Volume
    44
  • Issue
    2
  • fYear
    2008
  • Firstpage
    175
  • Lastpage
    181
  • Abstract
    In this paper, a comparative study of the gain spectra of quantum-well (QW) and quantum-dot (QD) lasers is presented. We point out the differences between the gain function of a QD laser and a QW laser and give a qualitative description of the effect that leads to the high wavelength stability of QD lasers. Furthermore, we demonstrate, by means of the gain spectra of an InGaAs and AlInGaAs QD laser, that devices with a high wavelength stability can be manufactured over a wide range of emission energies. The experimentally obtained data are fitted with a theoretical model that describes the gain of a QD ensemble. The characteristic features resulting in the high wavelength stability of QD lasers of 0.072 nm/K are analyzed and discussed.
  • Keywords
    III-V semiconductors; aluminium compounds; gallium arsenide; indium compounds; laser stability; quantum dot lasers; quantum well lasers; thermal stability; AlInGaAs; INGaAs; gain function; quantum-dot lasers; quantum-well lasers; temperature-stable emission wavelength; wavelength stability; Laser modes; Laser stability; Laser theory; Optical resonators; Pump lasers; Quantum dot lasers; Quantum dots; Quantum well lasers; Semiconductor lasers; Temperature; Gain measurement; modal gain; molecular beam epitaxy (MBE); self-assembled quantum dots (QD); semiconductor lasers; temperature stability;
  • fLanguage
    English
  • Journal_Title
    Quantum Electronics, IEEE Journal of
  • Publisher
    ieee
  • ISSN
    0018-9197
  • Type

    jour

  • DOI
    10.1109/JQE.2007.911693
  • Filename
    4418447