DocumentCode
1025192
Title
Gain Studies on Quantum-Dot Lasers With Temperature-Stable Emission Wavelength
Author
Debusmann, Ralph ; Schlereth, Thomas W. ; Gerhard, Sven ; Kaiser, Wolfgang ; Höfling, Sven ; Forchel, Alfred
Author_Institution
Univ. Wurzburg, Wurzburg
Volume
44
Issue
2
fYear
2008
Firstpage
175
Lastpage
181
Abstract
In this paper, a comparative study of the gain spectra of quantum-well (QW) and quantum-dot (QD) lasers is presented. We point out the differences between the gain function of a QD laser and a QW laser and give a qualitative description of the effect that leads to the high wavelength stability of QD lasers. Furthermore, we demonstrate, by means of the gain spectra of an InGaAs and AlInGaAs QD laser, that devices with a high wavelength stability can be manufactured over a wide range of emission energies. The experimentally obtained data are fitted with a theoretical model that describes the gain of a QD ensemble. The characteristic features resulting in the high wavelength stability of QD lasers of 0.072 nm/K are analyzed and discussed.
Keywords
III-V semiconductors; aluminium compounds; gallium arsenide; indium compounds; laser stability; quantum dot lasers; quantum well lasers; thermal stability; AlInGaAs; INGaAs; gain function; quantum-dot lasers; quantum-well lasers; temperature-stable emission wavelength; wavelength stability; Laser modes; Laser stability; Laser theory; Optical resonators; Pump lasers; Quantum dot lasers; Quantum dots; Quantum well lasers; Semiconductor lasers; Temperature; Gain measurement; modal gain; molecular beam epitaxy (MBE); self-assembled quantum dots (QD); semiconductor lasers; temperature stability;
fLanguage
English
Journal_Title
Quantum Electronics, IEEE Journal of
Publisher
ieee
ISSN
0018-9197
Type
jour
DOI
10.1109/JQE.2007.911693
Filename
4418447
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