DocumentCode
1025247
Title
The properties of ZrN films and ZrN-based tunnel junctions
Author
Pan, V.M. ; Komashko, V.A. ; Rudenko, E.M. ; Boguslavsky, Yu M. ; Zelenkevic, R.L.
Author_Institution
Institute of Metal Physics, Kiev, USSR
Volume
23
Issue
2
fYear
1987
fDate
3/1/1987 12:00:00 AM
Firstpage
1436
Lastpage
1439
Abstract
The results of investigation of the structure and physical properties of zirconium nitride films and tunnel junctions made of them are presented. Formation conditions of ZrN heteroepitaxial layers on sapphire substrates have been studied. Superconducting properties and resistivity of 23 to 240nm thickness films obtained on different substrates over deposition temperature range 450 to 1000°C have been investigated. The energy gap in ZrN films has been determined from I-V characteristics of ZrN-I-Pb junctions taking into account the proximity effect.
Keywords
Superconducting films; Tunnel devices/effects; Zirconium materials/devices; Atomic layer deposition; Cathodes; Crystallization; Physics; Sputtering; Substrates; Tellurium; Temperature dependence; Temperature distribution; Thermal stability;
fLanguage
English
Journal_Title
Magnetics, IEEE Transactions on
Publisher
ieee
ISSN
0018-9464
Type
jour
DOI
10.1109/TMAG.1987.1065110
Filename
1065110
Link To Document