Analysis of Gain and Luminescence in Violet and Blue GaInN–GaN Quantum Wells

Author

Witzigmann, Bernd ; Tomamichel, Marco ; Steiger, Sebastian ; Veprek, Ratko G. ; Kojima, Kazunobu ; Schwarz, Ulrich T.

Author_Institution

ETH Zurich, Zurich

Volume

44

Issue

2

fYear

2008

Firstpage

144

Lastpage

149

Abstract

In this paper, gain in GaInN quantum wells with 8% and 19% indium is analyzed using a comparison of a microscopic model to experimental data. It is shown that localized valence states can explain the characteristics of the gain spectra, in particular the broadening features at the red side of the spectrum. From an analysis of experimental and simulation data, the nonradiative current component is extracted, and is shown to dominate the total current density at laser threshold operation. The increase of nonradiative current with density explains the drop in internal quantum efficiency in GaInN light-emitting diodes.

Keywords

III-V semiconductors; gallium compounds; indium compounds; light emitting diodes; luminescence; semiconductor quantum wells; spectral line broadening; valence bands; GaInN-GaN; broadening features; gain; light emitting diodes; localized valence states; luminescence; nonradiative current component; quantum wells; total current density; Analytical models; Atomic measurements; Data mining; Fluctuations; Gallium alloys; Indium; Light emitting diodes; Luminescence; Optical microscopy; Transmission electron microscopy; Gain; LED; gallium-nitride; laser; simulation;

fLanguage

English

Journal_Title

Quantum Electronics, IEEE Journal of

Publisher

ieee

ISSN

0018-9197

Type

jour

DOI

10.1109/JQE.2007.910688

Filename

4418454