Title :
Field-induced modulations of refractive index and absorption coefficient in a GaAs/AlGaAs quantum well structure
Author :
Nagai, H. ; Yamanishi, M. ; Kan, Y. ; Suemune, I.
Author_Institution :
Hiroshima University, Department of Physical Electronics, Faculty of Engineering, Higashihiroshima, Japan
Abstract :
Dispersions of field-induced variations in refractive index and absorption coefficient of a GaAs/AlGaAs quantum well structure are obtained with electroreflectance and transmission measurements at room temperature. The result indicates a possibility of an electroabsorption modulator without frequency chirping, operating at a particular wavelength near an excitonic gap.
Keywords :
III-V semiconductors; aluminium compounds; electroreflectance; gallium arsenide; refractive index; semiconductor superlattices; III-V semiconductors; absorption coefficient; electroabsorption modulator; electroreflectance; excitonic gap; field-induced variations; quantum well structure; refractive index; room temperature; transmission measurements;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19860605
