DocumentCode
1025282
Title
Field-induced modulations of refractive index and absorption coefficient in a GaAs/AlGaAs quantum well structure
Author
Nagai, H. ; Yamanishi, M. ; Kan, Y. ; Suemune, I.
Author_Institution
Hiroshima University, Department of Physical Electronics, Faculty of Engineering, Higashihiroshima, Japan
Volume
22
Issue
17
fYear
1986
Firstpage
888
Lastpage
889
Abstract
Dispersions of field-induced variations in refractive index and absorption coefficient of a GaAs/AlGaAs quantum well structure are obtained with electroreflectance and transmission measurements at room temperature. The result indicates a possibility of an electroabsorption modulator without frequency chirping, operating at a particular wavelength near an excitonic gap.
Keywords
III-V semiconductors; aluminium compounds; electroreflectance; gallium arsenide; refractive index; semiconductor superlattices; III-V semiconductors; absorption coefficient; electroabsorption modulator; electroreflectance; excitonic gap; field-induced variations; quantum well structure; refractive index; room temperature; transmission measurements;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19860605
Filename
4256811
Link To Document