Title :
Schottky-barrier height of In0.43Al0.57As
Author :
Chu, Peter ; Lin, C.L. ; Wieder, H.H.
Author_Institution :
University of California at San Diego, Electrical Engineering & Computer Sciences Department, La Jolla, USA
Abstract :
The Schottky-barrier height of n-type In0 43Al0.57As grown by molecular-beam epitaxy on (100)-oriented n-type InP substrates measured by capacitance/voltage and internal photoemission measurements is ¿Bn = 1.2 ± 0.1 eV, comparable to that of AlAs and substantially larger than that of In0.52Al0.48As.
Keywords :
III-V semiconductors; Schottky effect; aluminium compounds; indium compounds; photoemission; semiconductor epitaxial layers; (100) surface; C-V measurements; III-V semiconductors; Schottky-barrier height; internal photoemission measurements; molecular-beam epitaxy; n-type semiconductors;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19860607
