DocumentCode :
1025325
Title :
Negative resistance in p-n junctions under avalanche breakdown conditions, part I
Author :
Misawa, T.
Author_Institution :
Bell Telephone Laboratories, Inc., Murray Hill, N. J.
Issue :
1
fYear :
1966
Firstpage :
137
Lastpage :
143
Abstract :
A one-dimensional, small-signal analysis of the space-charge region of a p-n junction in which avalanche occurs uniformly is presented. The impedance is found to have a negative real part. The impedance is Well represented by a parallel connection of the depletion layer capacitance, an inductance, and a negative resistance. The admittance of the latter two is proportional to the bias current. The magnitude of the negative Q is below ten. The negative resistance is due to an intrinsic instability in the avalanching electron-hole plasma. A discussion of the instability and a traveling-wave tube-like amplification is given.
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/T-ED.1966.15647
Filename :
1474237
Link To Document :
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