Title :
GaAs optoelectronic integrated receiver array exhibiting high-speed response and little crosstalk
Author :
Makiuchi, M. ; Hamaguchi, Hiroki ; Kumai, T. ; Wada, O.
Author_Institution :
Fujitsu Limited, Atsugi, Japan
Abstract :
The letter focuses on the measurement of speed and crosstalk characteristics of a photoreceiver array which is composed of metal-semiconductor-metal (MSM) photodiodes and metal-semiconductor field-effect transistors (MESFETs) monolithically integrated on a semi-insulating (SI) GaAs substrate. We have obtained excellent eye diagrams at 2 Gbit/s, NRZ, and little crosstalk between nearest-neighbour channels of ¿27 dB at 1.2 GHz.
Keywords :
III-V semiconductors; Schottky gate field effect transistors; crosstalk; integrated optoelectronics; photodetectors; photodiodes; III-V semiconductors; MESFETs; MSM photodiodes; crosstalk; eye diagrams; high-speed response; nearest-neighbour channels; optoelectronic integrated receiver array; photoreceiver; semi-insulating substrates;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19860609