• DocumentCode
    1025544
  • Title

    4 Gbit/s GaAs MESFET laser-driver IC

  • Author

    Chen, F.S.

  • Author_Institution
    AT&T Bell Laboratories, Murray Hill, USA
  • Volume
    22
  • Issue
    18
  • fYear
    1986
  • Firstpage
    932
  • Lastpage
    933
  • Abstract
    A high-speed laser-driver IC has been fabricated using etched-gate enhancement/depletion-mode MESFET technology. It has been demonstrated that the device is capable of driving 25¿ load with 80 mA modulation current at up to 4 Gbit/s NRZ data rate.
  • Keywords
    III-V semiconductors; Schottky gate field effect transistors; field effect integrated circuits; gallium arsenide; integrated optoelectronics; optical modulation; semiconductor junction lasers; MESFET laser-driver IC; NRZ data rate; etched-gate enhancement/depletion-mode MESFET technology; modulation current;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19860634
  • Filename
    4256841
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1025544