Title :
GaAs PIN electro-optic travelling-wave modulator at 1.3 μm
Author :
Lin, S.H. ; Wang, S.Y. ; Houng, Y.M.
Author_Institution :
Hewlett-Packard Laboratories, Palo Alto, USA
Abstract :
A GaAs PIN travelling-wave modulator operated at 1.3 μm has been fabricated from material grown by organometallic vapour phase epitaxy (OMVPE) on an n+ (100) GaAs substrate. The device has a constant Vπ of 8 V from DC to 10 GHz and an optical extinction ratio of 13 dB. The optical insertion loss of the device is 3.5 dB, and the 3 dB frequency bandwidth is measured to be 4.1 GHz, which is limited by the microwave slowing induced by the n+ substrate.
Keywords :
III-V semiconductors; electro-optical devices; gallium arsenide; integrated optics; optical modulation; optical waveguide components; PIN travelling-wave modulator; frequency bandwidth; microwave slowing; n+ substrate; optical extinction ratio; optical insertion loss; organometallic vapour phase epitaxy;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19860636
