DocumentCode :
1025623
Title :
Ion-beam deposition of NbNx Cy thin films for microelectronic applications
Author :
Lin, L.-J. ; Prober, D.E.
Author_Institution :
Bell Communication Research Laboratory, Red Bank, NJ
Volume :
23
Issue :
2
fYear :
1987
fDate :
3/1/1987 12:00:00 AM
Firstpage :
839
Lastpage :
842
Abstract :
We have fabricated high quality superconducting NbNx Cy thin films using a low-energy dual ion-beam fabrication method. In this method, one ion beam sputters Nb to the substrate while the second beam bombards the growing film with low energy (∼100 eV) N2 +CH4 ions. The use of methane as a source of carbon is essential for this method. NbNx Cy thin films fabricated in this way have Tc up to 13.2K, resistivity 
cm, residual resistance ratio ∼1.0 and calculated magnetic penetration depths <285 nm. These films are deposited on Si wafers which are not intentionally heated or cooled. Electronic tunneling studies indicate that these films are strong coupled superconductors ( 
) with superconducting energy gaps up to 2.43 meV. NbNx Cy /native oxide/Pb-alloy Junctions have properties suitable for SIS mixer applications.
cm, residual resistance ratio ∼1.0 and calculated magnetic penetration depths <285 nm. These films are deposited on Si wafers which are not intentionally heated or cooled. Electronic tunneling studies indicate that these films are strong coupled superconductors ( ) with superconducting energy gaps up to 2.43 meV. NbNKeywords :
Ion implantation; Superconducting films; Conductivity; Fabrication; Ion beams; Magnetic films; Niobium; Sputtering; Substrates; Superconducting devices; Superconducting films; Superconducting thin films;
fLanguage :
English
Journal_Title :
Magnetics, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9464
Type :
jour
DOI :
10.1109/TMAG.1987.1065146
Filename :
1065146
Link To Document :
