DocumentCode :
1025635
Title :
The poly-silicon insulated-gate field-effect transistor
Author :
Fa, C.H. ; Jew, T.T.
Author_Institution :
North American Aviation, Inc., Anaheim, Calif.
Issue :
2
fYear :
1966
Firstpage :
290
Lastpage :
291
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/T-ED.1966.15682
Filename :
1474272
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1025635
