DocumentCode

1025635

Title

The poly-silicon insulated-gate field-effect transistor

Author

Fa, C.H. ; Jew, T.T.

Author_Institution

North American Aviation, Inc., Anaheim, Calif.

Issue

2

fYear

1966

Firstpage

290

Lastpage

291

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/T-ED.1966.15682

Filename

1474272