Title :
Planar buried heterostructure InP/GaInAs lasers grown entirely by OMVPE
Author :
Miller, B.I. ; Koren, U. ; Capik, R.J.
Author_Institution :
AT&T Bell Laboratories, Holmdel, USA
Abstract :
GaInAs/InP planar buried heterostructure (PBH) lasers with semi-insulating blocking layers were grown in an `all¿ atmospheric OMVPE system. These layers had current thresholds as low as 35 mA and differential quantum efficiencies of ¿16% at a wavelength of 1.64 ¿m. The maximum power output was 80 mW pulsed and 8mWCW.
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; semiconductor growth; semiconductor junction lasers; vapour phase epitaxial growth; CW power; OMVPE; current thresholds; differential quantum efficiencies; maximum power output; planar BH laser; pulsed power; semiconductor laser; semiinsulating blocking layers; wavelength;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19860646
