Title :
New double heterostructure optoelectronic triangular barrier switch (OETBS)
Author :
Mand, R.S. ; Ashizawa, Y. ; Nakamura, M.
Author_Institution :
Toshiba Corporation, Research & Development Center, Kawasaki, Japan
Abstract :
A new high-speed, high-power optoelectronic device, with a double heterostructure, is proposed and demonstrated. The device has bistable electrical characteristics where light emission occurs in the on-state. The high optical power output was measured to be 209¿W at 100 mA. The transient electrical and optical rise times have been measured to be 500 ps and 1 ns, respectively.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; integrated optoelectronics; semiconductor switches; bistable electrical characteristics; double-heterostructure optoelectronic triangular barrier switch; light emission; optical power output; transient rise times;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19860649
