• DocumentCode
    10257
  • Title

    Modeling and Design of Photonic Crystal Quantum-Dot Semiconductor Optical Amplifiers

  • Author

    Taleb, Hussein ; Abedi, Kambiz

  • Author_Institution
    Dept. of Electr. Eng., Shahid Beheshti Univ., Tehran, Iran
  • Volume
    61
  • Issue
    7
  • fYear
    2014
  • fDate
    Jul-14
  • Firstpage
    2419
  • Lastpage
    2426
  • Abstract
    A novel design of electrically pumped photonic crystal quantum-dot semiconductor optical amplifiers (PC-QDSOAs) is presented in this paper. Therefore, we design a single-mode flat-band slow light photonic crystal waveguide (SL-PCW) for an InAs/GaAs QDSOA in which the pumping is done by passing a current through a laterally doped p+-p-n+ structure. In addition, for the first time to our knowledge, we propose a nonlinear state space model (NSSM) for PC-QDSOAs, in which the effects of the SL-PCW dispersion relation as well as the effects of the homogeneous and inhomogeneous broadenings of QDs are considered. To do so, the SL effects on the gain enhancement factor and increase of the optical losses are evaluated by considering the wavelength dependence of the modal confinement factor, the group index dispersion, and the SL-enhanced absorption and scattering losses in the SL-PCWs with QD active region. The gain saturation characteristics and modal gain spectra of the PC-QDSOA are investigated under different conditions including pump current and the amplifier length. Simulation results show that the SL-PCWs can be used to reduce the transparency current of the amplifier by a factor of 20 and even more compared with the conventional QDSOAs based on ridge waveguide structures, and enhance the net modal gain of the QD active region by a factor of two to six over a broad wavelength range of about 62 nm. We found that the power consumption of PC-QDSOAs can be decreased by a factor of about 100, and also the amplifier length can be reduced by a factor of five and beyond, compared with the conventional QDSOAs. The results of this paper are useful for many applications where low power consumption and small size of the optical amplifiers are important.
  • Keywords
    III-V semiconductors; gallium arsenide; indium compounds; optical losses; optical waveguides; photonic crystals; quantum dots; ridge waveguides; semiconductor optical amplifiers; slow light; InAs-GaAs; NSSM; PC-QDSOA; QD active region; SL-PCW; SL-enhanced absorption; amplifier length; gain enhancement factor; gain saturation characteristics; group index dispersion; laterally doped structure; modal confinement factor; modal gain spectra; nonlinear state space model; optical losses; pump current; quantum-dot semiconductor optical amplifiers; ridge waveguide structures; scattering losses; single-mode flat-band slow light photonic crystal waveguide; transparency current; wavelength dependence; Dispersion; Gallium arsenide; Indexes; Optical losses; Optical scattering; Optical waveguides; Photonic crystal waveguide (PCW); quantum-dot (QD); semiconductor optical amplifiers (SOAs); slow light (SL); state space model (SSM); state space model (SSM).;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/TED.2014.2321189
  • Filename
    6817612