DocumentCode :
1025887
Title :
Frequency shift of a GaAlAs diode laser in a magnetic field
Author :
Sato, Takao ; Yashima, S. ; Shimba, M.
Author_Institution :
Niigata University, Faculty of Engineering, Niigata, Japan
Volume :
22
Issue :
19
fYear :
1986
Firstpage :
979
Lastpage :
981
Abstract :
The oscillation frequency shift of a GaAlAs diode laser under a magnetic field at room temperature is reported. In this experiment the observed frequency shift is 500 MHz to the low-frequency side at the magnetic flux density of 1.4 T, and shows the quadratic dependence on the magnetic flux density.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; magneto-optical effects; semiconductor junction lasers; GaAlAs diode laser; magnetic field; magnetic flux density; oscillation frequency shift; semiconductors;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el:19860670
Filename :
4256879
Link To Document :
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