Title :
The use of MOS structure for the design of high value resistors in monolithic integrated circuits
Author_Institution :
Fairchild Camera snd Instrument Corporation, Palo Alto, Calif.
fDate :
5/1/1966 12:00:00 AM
Abstract :
The application of P-channel MOS structure as a resistor is studied in detail. The device operates below saturation. Effective sheet resistances of 7-25 kohms/sq. can be achieved with fair controllability. The linearity of the V-I characteristics will be determined by the biasing conditions. The temperature coefficient of such a resistor is ≈0.3-0.35 percent/°C.
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1966.15712
