• DocumentCode
    1025910
  • Title

    The use of MOS structure for the design of high value resistors in monolithic integrated circuits

  • Author

    Vadasz, L.

  • Author_Institution
    Fairchild Camera snd Instrument Corporation, Palo Alto, Calif.
  • Issue
    5
  • fYear
    1966
  • fDate
    5/1/1966 12:00:00 AM
  • Firstpage
    459
  • Lastpage
    465
  • Abstract
    The application of P-channel MOS structure as a resistor is studied in detail. The device operates below saturation. Effective sheet resistances of 7-25 kohms/sq. can be achieved with fair controllability. The linearity of the V-I characteristics will be determined by the biasing conditions. The temperature coefficient of such a resistor is ≈0.3-0.35 percent/°C.
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/T-ED.1966.15712
  • Filename
    1474302
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1025910