Title :
Reduction of threshold current density of 2.2μm GaInAsSb/AlGaAsSb injection lasers
Author :
Caneau, C. ; Srivastava, A.K. ; Dentai, A.G. ; Zyskind, J.L. ; Burrus, C.A. ; Pollack, M.A.
Author_Institution :
AT&T Bell Laboratories, Crawford Hill Laboratory, Holmdel, USA
Abstract :
GaInAsSb/AlGaAsSb injection lasers have been fabricated with increased Al concentration in the cladding layers. As a result of improved optical and electrical confinement, the threshold current density Jth for these double heterostructures was a factor of two lower than reported previously; CW operation was achieved up to 235 K.
Keywords :
III-V semiconductors; aluminium compounds; current density; gallium arsenide; indium antimonide; semiconductor junction lasers; GaInAsSb-AlGaAsSb; GaInAsSb/AlGaAsSb injection lasers; III-V semiconductor; cladding layers; continuous wave operation; double heterostructures; electrical confinement; injection lasers; optical confinement; threshold current density;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19860678
