• DocumentCode
    1026091
  • Title

    Influence of drain-induced barrier lowering on the dynamic conductance of short-channel MOSFETs

  • Author

    Ghibaudo, G. ; Cabon, B.

  • Author_Institution
    ENSERG, Laboratoire de Physique des Composants Ã\xa0 Semiconducteurs, UA-CNRS 840, Grenoble, France
  • Volume
    22
  • Issue
    19
  • fYear
    1986
  • Firstpage
    1010
  • Lastpage
    1011
  • Abstract
    An analysis of the influence of drain-induced barrier lowering (DIBL) on the dynamic conductance of short-channel MOSFETs is presented. A new method of determination of surface state density Nss from the normalised dynamic conductance characteristics is proposed. The method is extended to the case of very short-channel devices to account for DIBL effects.
  • Keywords
    insulated gate field effect transistors; surface electron states; drain-induced barrier lowering; dynamic conductance; short-channel MOSFETs; surface state density;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19860690
  • Filename
    4256899
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1026091