DocumentCode
1026150
Title
Silicon nitride, a new diffusion mask
Author
Doo, V.Y.
Author_Institution
IBM Systems Development Division, East Fishkill Facility, Hopewell Junction, N. Y.
Issue
7
fYear
1966
fDate
7/1/1966 12:00:00 AM
Firstpage
561
Lastpage
563
Abstract
Although in the last decade silicon dioxide has been used extensively as a diffusion mask in semiconductor device fabrication, it has many limitations. It fails to mask many important diffusants such as gallium, aluminum, zinc, and oxygen. The masking properties of silicon nitride have been investigated. The results show that silicon nitride masks not only the same diffusants as silicon dioxide but also many diffusants where silicon dioxide fails.
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/T-ED.1966.15735
Filename
1474325
Link To Document