• DocumentCode
    1026150
  • Title

    Silicon nitride, a new diffusion mask

  • Author

    Doo, V.Y.

  • Author_Institution
    IBM Systems Development Division, East Fishkill Facility, Hopewell Junction, N. Y.
  • Issue
    7
  • fYear
    1966
  • fDate
    7/1/1966 12:00:00 AM
  • Firstpage
    561
  • Lastpage
    563
  • Abstract
    Although in the last decade silicon dioxide has been used extensively as a diffusion mask in semiconductor device fabrication, it has many limitations. It fails to mask many important diffusants such as gallium, aluminum, zinc, and oxygen. The masking properties of silicon nitride have been investigated. The results show that silicon nitride masks not only the same diffusants as silicon dioxide but also many diffusants where silicon dioxide fails.
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/T-ED.1966.15735
  • Filename
    1474325