DocumentCode :
1026165
Title :
Influence of non-equilibrium carriers on the surface breakdown of diodes and MOS-structures
Author :
Schroen, W. ; Woodruff, R.D. ; Farrington, D.
Author_Institution :
Texas Instruments Incorporated, Dallas, Texas
Issue :
7
fYear :
1966
fDate :
7/1/1966 12:00:00 AM
Firstpage :
570
Lastpage :
577
Abstract :
The effect of a reduction of breakdown voltage 
by external illumination of an oxide protected planar n+p diode or by non-equilibrium carriers drifting in a surface channel has been investigated. The appearance of a localized area where the external light spot causes maximum is described. The influence of light wavelength and ambient has been studied. A model is presented to explain the facts that a small current of non-equilibrium carriers controls an avalanche current which is several orders of magnitude larger, and that no lock-on mechanism has been observed. The model involves the field enhancement by slowly moving carriers in the space charge region at a narrow distance from the Si-SiO2 interface. The influence of surface potentials on these carriers is emphasized.
by external illumination of an oxide protected planar n+p diode or by non-equilibrium carriers drifting in a surface channel has been investigated. The appearance of a localized area where the external light spot causes maximum is described. The influence of light wavelength and ambient has been studied. A model is presented to explain the facts that a small current of non-equilibrium carriers controls an avalanche current which is several orders of magnitude larger, and that no lock-on mechanism has been observed. The model involves the field enhancement by slowly moving carriers in the space charge region at a narrow distance from the Si-SiOfLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/T-ED.1966.15737
Filename :
1474327
Link To Document :
