• DocumentCode
    1026183
  • Title

    Gate turn-off in p-n-p-n devices

  • Author

    Wolley, E.D.

  • Author_Institution
    Westinghouse Research Laboratories, Pittsburgh, Pa.
  • Issue
    7
  • fYear
    1966
  • fDate
    7/1/1966 12:00:00 AM
  • Firstpage
    590
  • Lastpage
    597
  • Abstract
    A simple two-dimensional model for gated turn-off of a p-n-p-n device is used to derive an expression relating the storage time and the turn-off gain. The observed dependence of storage time on turn-off gain fits the derived expression well for devices specially fabricated consistant with the assumptions of the model. The fall time is discussed qualitatively.
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/T-ED.1966.15739
  • Filename
    1474329
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1026183