Title :
Analysis of index-guided AlGaAs lasers with mode filter
Author :
Verbeek, B.H. ; Opschoor, J. ; Vankwikelberge, P. ; Capelle, J. P Van De ; Baets, R.
Author_Institution :
Philips Research Laboratories, Eindhoven, Netherlands
Abstract :
The properties of index-guided lasers containing a lateral mode filter section are investigated both experimentally and theoretically. A beam propagation method (BPM) analysis gives a new explanation of the mode filtering properties of this structure, in which several higher-order local modes are excited at the abrupt interface between laser and mode filter. This results in a longitudinal interference pattern and asymmetric far fields, as observed experimentally.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; laser modes; optical filters; optical waveguides; semiconductor junction lasers; AlGaAs-GaAs semiconductor lasers; III-V semiconductors; LPE; abrupt interface; asymmetric far fields; beam propagation method; higher-order local modes; index-guided lasers; lateral mode filter section; liquid phase epitaxy; longitudinal interference pattern;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19860698
