Title :
Low-threshold AlGaAs/GaAs distributed feedback lasers fabricated by MOCVD
Author :
Hirata, Shinnosuke ; Honda, Kazuhiro ; Ohata, Takuma ; Miyahara, K. ; Tamamura, Kazuki ; Ishikawa, Hiroshi ; Mori, Yojiro ; Kojima, C.
Author_Institution :
Sony Corporation, Research Center, Yokohama, Japan
Abstract :
AlGaAs/GaAs distributed feedback (DFB) lasers with a ridge waveguide structure emitting at 0.88 ¿m were fabricated by normal-pressure metalorganic chemical vapour deposition (MOCVD). The DFB lasers have a low threshold current around 55 mA at room temperature and can be operated stably in a single longitudinal mode up to 40°C.
Keywords :
III-V semiconductors; aluminium compounds; distributed feedback lasers; gallium arsenide; laser modes; laser transitions; optical waveguides; semiconductor junction lasers; vapour phase epitaxial growth; 0.88 micron; 0.88 micron wavelength emission; 40°C; 55 mA; AlGaAs-GaAs semiconductor lasers; DFB lasers; III-V semiconductors; MOCVD; VPE; distributed feedback lasers; epitaxial growth; low threshold current; metalorganic chemical vapour deposition; ridge waveguide structure; single longitudinal mode; stable operation;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19860699
