1026276

Addendum: Noncontact electro-optic sampling with a GaAs injection laser

Nees, John ; Mourou, Gerard

22

19

1986

1032

III-V semiconductors; electric field measurement; electro-optical devices; gallium arsenide; measurement by laser beam; semiconductor junction lasers; 30 ps pulses; electro-optic sampling system; noncontact electric field measurements; semiconductor laser; substrate-independent probing geometry;

English

Electronics Letters

iet

0013-5194

jour

10.1049/el:19860707

4256917