Title :
Transistor failure by secondary breakdown
Author_Institution :
Tokyo Shibaura Electric Co., Ltd., Kawasaki City, Kanagawa, Japan
Abstract :
To solve the problem of transistor failures by transients in inductive load circuits, experiments are performed to monitor the voltage and current waveforms of such transients. It is concluded from this experiment that these failures are caused by secondary breakdown. A model of the local temperature rise is studied and shown to be the possible mechanism of secondary breakdown.
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1966.15754
