Title :
Flicker noise in GaAs MESFET X-band amplifiers in the temperature range 300 K to 2 K
Author :
Mann, L.D. ; Blair, D.G. ; Wellington, K.J.
Author_Institution :
University of Western Australia, Department of Physics, Perth, Australia
Abstract :
We report measurements of the noise temperature of small-signal, low-noise X-band GaAs MESFET amplifiers from room temperature down to 2 K, at offset frequencies of several hundred hertz from the carrier and for input carrier powers from -40 to -20dBm. We observe a dramatic increase in the level of flicker noise as these devices are cooled to liquid helium temperatures, in marked contrast to the normally observed decrease in noise temperature of an unsaturated GaAs MESFET amplifier as it is cooled.
Keywords :
III-V semiconductors; Schottky gate field effect transistors; cryogenics; gallium arsenide; microwave amplifiers; random noise; solid-state microwave circuits; 300K to 2K; GaAs; III-V semiconductors; MESFET; X-band amplifiers; cryogenic type; flicker noise; liquid helium temperatures; noise temperature; small-signal operation; solid-state microwave circuits; temperature range;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19860711
