DocumentCode :
1026453
Title :
Deep depletion thin-film silicon-on-sapphire MOS transistors
Author :
Heiman, F.P.
Author_Institution :
RCA Laboratories
Issue :
42591
fYear :
1966
Firstpage :
672
Lastpage :
672
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/T-ED.1966.15766
Filename :
1474356
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1026453
