Title :
Mechanism of carrier lifetime increase in ion beam synthesised SOI structures
Author :
Skorupa, Wolfgang ; Oertel, H. ; Bartsch, H.
Author_Institution :
Academy of Sciences of the GDR, Central Institute for Nuclear Research, Dresden, East Germany
Abstract :
Carrier lifetimes were measured in epitaxial silicon layers which were deposited on silicon wafers implanted with different nitrogen doses at 330 keV. At doses greater than 1016 cm-2 the lifetime was more than one order of magnitude higher on the implanted part of the wafers (~300¿s). The mechanism responsible for this effect is connected with the gettering efficiency for heavy metals of a precipitation-rich dislocation network in the implanted silicon.
Keywords :
carrier lifetime; elemental semiconductors; ion implantation; semiconductor-insulator boundaries; silicon; 330 keV; SOI structures; Si-Si3N4; Si-SiO2; Si:N; Si:N wafers; carrier lifetime increase; epitaxial Si layers; gettering efficiency; ion beam synthesis; ion implantation; precipitation-rich dislocation network; semiconductor insulator structure;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19860728
