Title :
Optical waveguides in In0.52Al0.48As grown on InP by MBE
Author :
Ritchie, S. ; Scott, E.G. ; Rodgers, P.M.
Author_Institution :
British Telecom Research Laboratories, Ipswich, UK
Abstract :
Planar and rib optical waveguides have been made in In0.52Al0.48As grown on InP substrates by molecular beam epitaxy. The evidence that In0.52Al0.48As has a higher refractive index than InP is at variance with the values obtained from existing theoretical models.
Keywords :
III-V semiconductors; aluminium compounds; indium compounds; molecular beam epitaxial growth; optical waveguides; refractive index; semiconductor growth; III-V semiconductor; In0.52Al0.48As; InAlAs-InP; InP; InP substrates; MBE; molecular beam epitaxy; optical waveguides; refractive index;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19860731
