DocumentCode :
1026530
Title :
Hole mobility in p-type inversion layers on thermally oxidized silicon surfaces
Author :
Colman, D. ; Mize, J.P.
Author_Institution :
Texas Instruments Incorporated
Issue :
42591
fYear :
1966
Firstpage :
674
Lastpage :
674
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/T-ED.1966.15775
Filename :
1474365
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1026530
