• DocumentCode
    1026531
  • Title

    Direct electro-optic sampling of a GaAs integrated circuit using a gain-switched InGaAsP injection laser

  • Author

    Taylor, A.J. ; Tucker, R.S. ; Wiesenfeld, J.M. ; Burrus, C.A. ; Eisenstein, G. ; Talman, J.R. ; Pei, S.S.

  • Author_Institution
    AT&T Bell Laboratories, Crawford Hill Laboratory, Holmdel, USA
  • Volume
    22
  • Issue
    20
  • fYear
    1986
  • Firstpage
    1068
  • Lastpage
    1069
  • Abstract
    We demonstrate an electro-optic sampling system based on a gain-switched InGaAsP injection laser. The system has a temporal resolution of 18ps and is used for noninvasive probing of waveform internal to a GaAs monolithic integrated circuit operating at 2.4GHz.
  • Keywords
    III-V semiconductors; electro-optical devices; gallium arsenide; gallium compounds; indium compounds; integrated circuit testing; integrated optoelectronics; laser beam applications; monolithic integrated circuits; semiconductor junction lasers; 18 ps; 2.4 GHz; GaAs; GaAs monolithic integrated circuit; InGaAsP; electrooptic sampling; gain-switched InGaAsP injection laser; noninvasive probing; semiconductor laser; temporal resolution;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19860732
  • Filename
    4256944
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1026531