DocumentCode
1026560
Title
1.5- mu m InGaAs/InAlGaAs quantum-well microdisk lasers
Author
Chu, D.Y. ; Chin, M.K. ; Sauer, N.J. ; Xu, Z. ; Chang, T.Y. ; Ho, S.T.
Author_Institution
Dept. of Electr. Eng. & Comput. Sci., Northwestern Univ., Evanston, IL, USA
Volume
5
Issue
12
fYear
1993
Firstpage
1353
Lastpage
1355
Abstract
Microdisk lasers with three InGaAs/InAlGaAs quantum wells were demonstrated for the first time. The selective etching method used to fabricate the laser structure is discussed. Lasers 20 mu m in diameter lased with single mode at 1.5- mu m wavelength when optically pumped by a pulsed argon-ion laser at 80 K.<>
Keywords
III-V semiconductors; aluminium compounds; etching; gallium arsenide; indium compounds; optical pumping; semiconductor lasers; semiconductor technology; 1.5 micron; 20 micron; 80 K; Ar; InGaAs-InAlGaAs; InGaAs/InAlGaAs quantum-well microdisk lasers; fabrication; optical pumping; pulsed argon-ion laser; selective etching; single mode; Distributed feedback devices; Etching; Indium gallium arsenide; Laser feedback; Laser modes; Pump lasers; Quantum well lasers; Ring lasers; Semiconductor lasers; Waveguide lasers;
fLanguage
English
Journal_Title
Photonics Technology Letters, IEEE
Publisher
ieee
ISSN
1041-1135
Type
jour
DOI
10.1109/68.262538
Filename
262538
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