Title :
High-power ridge-waveguide AlGaAs GRIN-SCH laser diode
Author :
Harder, Christian ; Buchmann, Peter ; Meier, Hektor
Author_Institution :
IBM Zurich Research Laboratory, Rÿschlikon, Switzerland
Abstract :
AlGaAs ridge single-quantum-well graded-index separate confinement heterostructure (SQW GRIN-SCH) lasers with typical threshold currents of 9 mA and differential quantum efficiencies between 80% and 85% for 0.4 mm-long cavities have been fabricated with molecular beam epitaxy. Continuous-wave light output increases linearly with the drive current up to approximately 15 times the threshold current. The lasers fail catastrophically at power levels between 65 mW/facet and 85 mW/facet, corresponding to power densities between 2.6 MW/cm2 and 3.4 MW/cm2.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; gradient index optics; molecular beam epitaxial growth; optical waveguides; semiconductor growth; semiconductor junction lasers; 80 to 85 percent; 9 mA; AlGaAs; AlGaAs GRIN-SCH laser diode; CW light output; differential quantum efficiencies; drive current; graded index separate confinement heterostructure lasers; molecular beam epitaxy; power densities; power levels; ridge-waveguide; semiconductor laser; threshold current; threshold currents;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19860741
