High-power ridge-waveguide AlGaAs GRIN-SCH laser diode

Author

Harder, Christian ; Buchmann, Peter ; Meier, Hektor

Author_Institution

IBM Zurich Research Laboratory, RÃ¿schlikon, Switzerland

Volume

22

Issue

20

fYear

1986

Firstpage

1081

Lastpage

1082

Abstract

AlGaAs ridge single-quantum-well graded-index separate confinement heterostructure (SQW GRIN-SCH) lasers with typical threshold currents of 9 mA and differential quantum efficiencies between 80% and 85% for 0.4 mm-long cavities have been fabricated with molecular beam epitaxy. Continuous-wave light output increases linearly with the drive current up to approximately 15 times the threshold current. The lasers fail catastrophically at power levels between 65 mW/facet and 85 mW/facet, corresponding to power densities between 2.6 MW/cm2 and 3.4 MW/cm2.

Keywords

III-V semiconductors; aluminium compounds; gallium arsenide; gradient index optics; molecular beam epitaxial growth; optical waveguides; semiconductor growth; semiconductor junction lasers; 80 to 85 percent; 9 mA; AlGaAs; AlGaAs GRIN-SCH laser diode; CW light output; differential quantum efficiencies; drive current; graded index separate confinement heterostructure lasers; molecular beam epitaxy; power densities; power levels; ridge-waveguide; semiconductor laser; threshold current; threshold currents;

fLanguage

English

Journal_Title

Electronics Letters

Publisher

iet

ISSN

0013-5194

Type

jour

DOI

10.1049/el:19860741

Filename

4256954