Title :
The high-speed limit of FM response in semiconductor lasers
Author :
Takakuwa, C. ; Morinaga, Motosayu ; Tohyama, Masaki ; Suzuki, Nobuo
Author_Institution :
Mater. & Devices Res. Labs., Toshiba Corp., Kawasaki, Japan
Abstract :
The high-speed frequency modulation (FM) response has been investigated through rate equation analysis. The intrinsic limit of FM response has been found to be given by the product of FM efficiency, eta /sub FM/, and the FM bandwidth, B. This relation shows that a wide FM bandwidth means a small FM efficiency. Although the FM efficiency changes with the differential gain or the nonlinear gain coefficient, eta /sub FM/B is almost constant. The value of eta /sub FM/B was about 5 GHz/sup 2//mA for 1.5- mu m InGaAsP/InP lasers with 300- mu m cavity length. This limit has been confirmed experimentally.<>
Keywords :
III-V semiconductors; frequency modulation; gallium arsenide; high-speed optical techniques; indium compounds; laser theory; optical modulation; semiconductor lasers; 1.5 micron; 300 micron; FM bandwidth; FM efficiency; InGaAsP-InP; InGaAsP/InP lasers; cavity length; differential gain coefficient; frequency modulation response; high-speed limit; nonlinear gain coefficient; rate equation analysis; semiconductor lasers; Bandwidth; Charge carrier density; Fiber lasers; Frequency modulation; Nonlinear equations; Nonlinear optics; Optical refraction; Optical variables control; Resonant frequency; Semiconductor lasers;
Journal_Title :
Photonics Technology Letters, IEEE
