(Al,Ga)Sb long-wavelength distributed Bragg reflectors

Author

Tuttle, Gary ; Kavanaugh, Jonathan ; McCalmont, Scott

Author_Institution

Dept. of Electr. Eng. & Comput. Eng., Iowa State Univ., Ames, IA, USA

Volume

5

Issue

12

fYear

1993

Firstpage

1376

Lastpage

1379

Abstract

The authors have grown long-wavelength distributed Bragg reflectors (DBRs), using alternating layers of the semiconductors AlSb and (Al,Ga)Sb, and measured their properties. The large refractive index ratio available with these materials allows for high-reflectivity mirrors with relative few mirror pairs. A simple 10-period AlSb/GaSb DBR had a maximum reflectivity of over 98% at a wavelength of 1.92 mu m, and a 12-period Al/sub 0.2/Ga/sub 0.8/Sb/AlSb DBR exhibited reflectance greater than 99% at 1.38 mu m. These structures are easily grown by molecular beam epitaxy (MBE) and are suitable for use in surface-normal photonic devices operating at long wavelengths.<>

Keywords

III-V semiconductors; aluminium compounds; distributed Bragg reflector lasers; gallium compounds; integrated optics; mirrors; molecular beam epitaxial growth; reflectivity; refractive index; semiconductor growth; (Al,Ga)Sb long-wavelength distributed Bragg reflectors; 1.38 micron; 1.92 micron; Al/sub 0.2/Ga/sub 0.8/Sb-AlSb; AlSb-GaSb; alternating semiconductor layers; growth; high-reflectivity mirrors; mirror pairs; molecular beam epitaxy; reflectance; refractive index; surface-normal photonic devices; Distributed Bragg reflectors; Gallium arsenide; Mirrors; Molecular beam epitaxial growth; Optical surface waves; Reflectivity; Refractive index; Surface emitting lasers; Vertical cavity surface emitting lasers; Waveguide lasers;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/68.262546

Filename

262546