Title :
Realization of tensile strain on GaAs substrates for polarization independent optical modulation
Author :
Chan, Yuen-Chuen ; Tada, Kunio
Author_Institution :
Dept. of Electron. Eng., Tokyo Univ., Japan
Abstract :
The quantum-confined Stark effect of tensile-strained GaAs-InAlAs quantum wells grown on top of a related nonpseudomorphic InAlAs grid layer on GaAs substrates was studied. It was demonstrated by waveguide absorption measurements that polarization-independent optical modulation in tensile-strained GaAs wells is possible in a wavelength range of around 870 nm.<>
Keywords :
III-V semiconductors; Stark effect; aluminium compounds; gallium arsenide; indium compounds; light polarisation; optical modulation; semiconductor quantum wells; 870 nm; GaAs; GaAs substrates; GaAs-InAlAs; GaAs-lnAlAs quantum wells; nonpseudomorphic InAlAs grid layer; polarization independent optical modulation; quantum-confined Stark effect; tensile strain; waveguide absorption; Absorption; Energy states; Gallium arsenide; Optical modulation; Optical polarization; Optical refraction; Optical variables control; Optical waveguides; Potential well; Tensile strain;
Journal_Title :
Photonics Technology Letters, IEEE
