Title :
InGaAs/InAlAs heterojunction Schottky transistors grown by MBE
Author :
Vlcek, J.C. ; Fonstad, C.G.
Author_Institution :
Massachusetts Institute of Technology, Department of Electrical Engineering & Computer Science and Center for Materials Science & Engineering, Cambridge, USA
Abstract :
Heterojunction bipolar transistors incorporating a Schottky collector have been fabricated in In0.53Ga0.47As/In0.52Al0.48As grown by molecular beam epitaxy. Devices show very high emitter-base junction saturation current densities, low offset voltages and current gain greater than unity (¿2.5) in spite of the fact that no attempt was made to isolate the extrinsic base-emitter junction.
Keywords :
III-V semiconductors; Schottky effect; aluminium compounds; bipolar transistors; gallium arsenide; indium compounds; molecular beam epitaxial growth; semiconductor growth; HJBT; InGaAs-InAlAs; InGaAs/InAlAs heterojunction Schottky transistors; Schottky collector; bipolar transistors; current gain; emitter-base junction saturation current densities; extrinsic base-emitter junction; molecular beam epitaxy; offset voltages;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19860746
