Polarization-insensitive high-contrast GaAs/AlGaAs waveguide modulator based on the Franz-Keldysh effect

Author

Knüpfer, B. ; Kiesel, P. ; Kneissl, M. ; Dankowski, S. ; Linder, N. ; Weimann, G. ; Döhler, G.H.

Author_Institution

Inst. fur Tech. Phys., Erlangen-Nurnberg Univ., Germany

Volume

5

Issue

12

fYear

1993

Firstpage

1386

Lastpage

1388

Abstract

A GaAs/AlGaAs p-i-n double heterostructure waveguide modulator based on the Franz-Keldysh effect is reported. On/off ratios up to 40 dB are obtained over a broad range of wavelengths (>or=32 dB between 905 nm and 960 nm), while absorption loss in the on-state is very low (<1 cm/sup -1/). The polarization dependence of the Franz-Keldysh effect is relatively weak and only causes a shift of the transmission-voltage characteristics of TE-polarized light towards higher reverse bias compared to the corresponding TM curves. Therefore, very high contrast ratios are achievable over the whole range of wavelengths even for arbitrary polarization of the light.<>

Keywords

III-V semiconductors; aluminium compounds; electro-optical devices; gallium arsenide; light polarisation; optical modulation; optical waveguides; p-i-n photodiodes; 905 to 960 nm; Franz-Keldysh effect; GaAs-AlGaAs; GaAs/AlGaAs waveguide modulator; TE-polarized light; TM curves; absorption loss; high-contrast; higher reverse bias; on/off ratios; p-i-n double heterostructure waveguide modulator; polarization dependence; polarization-insensitive; transmission-voltage characteristics; very high contrast ratios; Absorption; Electrooptic modulators; Electrooptical waveguides; Gallium arsenide; Optical modulation; Optical polarization; Optical waveguides; PIN photodiodes; Photonic band gap; Stark effect;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/68.262549

Filename

262549