DocumentCode :
1026706
Title :
Independence of absorption coefficient-linewidth product to material system for multiple quantum wells with excitons from 850 nm to 1064 nm
Author :
Goossen, Keith W. ; Santos, M.B. ; Cunningham, J.E. ; Jan, W.Y.
Author_Institution :
AT&T Bell Labs., Holmdel, NJ, USA
Volume :
5
Issue :
12
fYear :
1993
Firstpage :
1392
Lastpage :
1394
Abstract :
The authors have measured the absorption coefficient ( alpha ) and linewidth ( Delta ) of the excitons of GaAs/AlGaAs and strain-balanced InGaAs/GaAsP multiple-quantum-well (MQW) modulators with wavelengths from 850 to 1064 nm. They find that alpha decreases and Delta increases as wavelength increases, but their product, and thus the integrated absorption coefficient, remains roughly constant. Thus, the reduced performance observed for longer wavelength modulators is due to exciton broadening.<>
Keywords :
III-V semiconductors; aluminium compounds; electro-optical devices; excitons; gallium arsenide; optical modulation; semiconductor quantum wells; spectral line breadth; 850 to 1064 nm; GaAs-AlGaAs; GaAs/AlGaAs; InGaAs/GaAsP; absorption coefficient-linewidth product; electro optical devices; exciton broadening; excitons; integrated absorption coefficient; material system; multiple quantum wells; strain-balanced; Absorption; Capacitive sensors; Excitons; Gallium arsenide; Indium gallium arsenide; Optical modulation; Optical surface waves; Quantum well devices; Rough surfaces; Surface roughness;
fLanguage :
English
Journal_Title :
Photonics Technology Letters, IEEE
Publisher :
ieee
ISSN :
1041-1135
Type :
jour
DOI :
10.1109/68.262551
Filename :
262551
Link To Document :
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