Title :
Pixels consisting of a single vertical-cavity laser thyristor and a double vertical-cavity phototransistor
Author :
Kosaka, Hideo ; Ogura, Ichiro ; Saito, Hideaki ; Sugimoto, Mitsunori ; Kurihara, Kaori ; Numai, Takahiro ; Kasahara, Kenichi
Author_Institution :
Opto-Electron. Res. Labs., NEC Corp., Ibaraki, Japan
Abstract :
Bidirectionally cascadable optical pixels that consist of a single-vertical-cavity surface-emitting laser (VCSEL) thyristor and a double-vertical-cavity phototransistor are proposed. Despite almost identical layer structures, each device characteristic can be independently optimized by introducing a lambda /2-spacer layer into the phototransistor section. A lasing threshold of 0.8 mA and a slope efficiency of 0.25 W/A are obtained for the laser thyristor, and a flat-topped photocurrent spectrum over 30 A and a photocurrent gain of 70 A/W are obtained for the phototransistor at the resonant wavelength. This work demonstrates the possibility of monolithic integration using thermal desorption and a regrowth technique and the suitability of these devices for massively parallel optical interconnections.<>
Keywords :
integrated optoelectronics; laser cavity resonators; optical interconnections; photoconductivity; phototransistors; semiconductor lasers; thyristors; 0.8 mA; 30 A; bidirectionally cascadable optical pixels; double vertical-cavity phototransistor; flat-topped photocurrent spectrum; lambda /2-spacer layer; lasing threshold; layer structures; massively parallel optical interconnections; monolithic integration; photocurrent gain; pixels; regrowth technique; resonant wavelength; single vertical-cavity laser thyristor; single-vertical-cavity surface-emitting laser; slope efficiency; thermal desorption; Distributed Bragg reflectors; Gallium arsenide; Optical interconnections; Optical surface waves; Photoconductivity; Phototransistors; Quantum well lasers; Surface emitting lasers; Thyristors; Vertical cavity surface emitting lasers;
Journal_Title :
Photonics Technology Letters, IEEE
