Title :
An Al/sub x/Ga/sub 1-x/Sb avalanche photodiode with a gain bandwidth product of 90 GHz
Author :
Kuwatsuka, H. ; Mikawa, T. ; Miura, S. ; Yasuoka, N. ; Tanahashi, T. ; Wada, O.
Author_Institution :
Fujitsu Labs. Ltd., Atsugi, Japan
Abstract :
An Al/sub x/Ga/sub 1-x/Sb avalanche photodiode (APD) with an Al composition of 0.05 has been fabricated and tested. The measured gain-bandwidth (GB) product of the highly doped diode is 90 GHz. Such a large GB product has never been previously achieved by any APD materials sensitive in the long-wavelength region. This suggests the advantage of the Al/sub x/Ga/sub 1-x/Sb material system for very high-speed operation.<>
Keywords :
III-V semiconductors; aluminium compounds; avalanche photodiodes; gallium compounds; 90 GHz; Al/sub x/Ga/sub 1-x/Sb avalanche photodiode; III-V semiconductor; gain bandwidth product; highly doped diode; long-wavelength region; very high-speed operation; Avalanche photodiodes; Bandwidth; Bit rate; Capacitance; Dark current; Frequency measurement; Gold; Indium phosphide; Ionization; Semiconductor diodes;
Journal_Title :
Photonics Technology Letters, IEEE
