Title :
Monolithically integrated InGaAs/InP MSM-FET photoreceiver prepared by chemical beam epitaxy
Author :
Yang, Long ; Sudbo, A.S. ; Tsang, W.T. ; Garbinski, P.A. ; Camarda, R.M.
Author_Institution :
AT&T Bell Lab., Murray Hill, NJ, USA
Abstract :
The first monolithic integration of a metal-semiconductor-metal (MSM) InGaAs photodetector with a field-effect transistor (FET) and resistors into a high-impedance front-end photoreceiver circuit is discussed. The sample was grown in a single step by chemical beam epitaxy, and standard processing steps for making FETs were used to fabricate the receiver circuit. Semi-insulating Fe-doped InP layers were used as the insulating gate of the FET, the barrier enhancement layer in the MSM photodetector, and the electrical isolation layer between the photodetector and the electronic circuit. A bit error rate of less than 10/sup -9/ at 200 Mb/s has been achieved with this preliminary circuit for an optical power of -17 dBm.<>
Keywords :
III-V semiconductors; chemical beam epitaxial growth; gallium arsenide; indium compounds; integrated optoelectronics; metal-semiconductor-metal structures; photodetectors; receivers; semiconductor growth; 200 Mbit/s; InGaAs-InP:Fe; barrier enhancement layer; bit error rate; chemical beam epitaxy; electrical isolation layer; field-effect transistor; high-impedance front-end photoreceiver circuit; insulating gate; metal semiconductor metal photodetector; monolithic integration; optical power; resistors; Chemical processes; Dielectrics and electrical insulation; Epitaxial growth; FETs; Indium gallium arsenide; Indium phosphide; Molecular beam epitaxial growth; Monolithic integrated circuits; Photodetectors; Resistors;
Journal_Title :
Photonics Technology Letters, IEEE
