Title :
Tapered waveguide InGaAs/InGaAsP multiple-quantum-well lasers
Author :
Koch, T.L. ; Koren, U. ; Eisenstein, G. ; Young, M.G. ; Oron, M. ; Giles, C.R. ; Miller, B.I.
Author_Institution :
AT&T Bell Lab., Holmdel, NJ, USA
Abstract :
The use of ultrathin etch-stop techniques to expand the vertical optical mode size adiabatically in 1.5- mu m InGaAs/InGaAsP MQW lasers using a tapered-core passive intracavity waveguide structure is discussed. 30% differential quantum efficiency out the tapered facet, far-field FWHM of approximately 12 degrees and a butt-coupling efficiency into a cleaved fiber of -4.2 dB, with -1-dB alignment tolerances of approximately +or-3 mu m, were achieved.<>
Keywords :
III-V semiconductors; etching; gallium compounds; indium compounds; laser cavity resonators; optical waveguides; optical workshop techniques; semiconductor junction lasers; 1.5 micron; 30 percent; III-V semiconductors; InGaAs; InGaAsP; alignment tolerances; butt-coupling efficiency; cleaved fiber; differential quantum efficiency; far-field FWHM; full width half maximum; tapered facet; tapered waveguide InGaAs-InGaAsP multiple quantum well lasers; tapered-core passive intracavity waveguide structure; ultrathin etch-stop techniques; vertical optical mode size; Etching; Fiber lasers; Indium gallium arsenide; Indium phosphide; Laser modes; Optical device fabrication; Optical fibers; Optical waveguides; Quantum well devices; Waveguide lasers;
Journal_Title :
Photonics Technology Letters, IEEE
