Room temperature continuous wave operation of 671 nm wavelength GaInAsP/AlGaAs VSIS lasers

Author

Chong, Te-Ho ; Kishino, Katsumi

Author_Institution

Dept. of Electr. & Electron. Eng., Sophia Univ., Tokyo, Japan

Volume

2

Issue

2

fYear

1990

Firstpage

91

Lastpage

93

Abstract

Room-temperature continuous-wave (CW) operation of a liquid-phase epitaxy (LPE)-grown GaInAsP/AlGaAs laser that uses a V-channel substrate inner stripe (VSIS) structure to obtain current confinement and transverse mode control is discussed. The threshold current and lasing wavelength were 77 mA and 671 nm, respectively, and the temperature dependence of the threshold current was such that the characteristic temperature was 75 K.<>

Keywords

III-V semiconductors; aluminium compounds; gallium arsenide; gallium compounds; indium compounds; liquid phase epitaxial growth; semiconductor growth; semiconductor junction lasers; 293 K; 671 nm; 75 K; 77 mA; V-channel substrate inner stripe structure; characteristic temperature; current confinement; lasing wavelength; liquid phase epitaxy grown GaInAsP-AlGaAs laser; room temperature continuous wave operation; temperature dependence; threshold current; transverse mode control; Fiber lasers; Gallium arsenide; Laser modes; MOCVD; Optical control; Optical device fabrication; Semiconductor lasers; Substrates; Temperature dependence; Threshold current;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/68.47057

Filename

47057