High-speed 1.3 μm DFB laser with modified DCPBH stucture

Author

W¿¿nstel, K. ; Mozer, A. ; Schilling, Meinhard ; Luz, Gerhard ; L¿¿sch, K. ; Schweizer, H. ; Schemmel, G. ; Hildebrand, O.

Author_Institution

Standard Elektrik Lorenz AG, Research Centre, Optoelectronic Components Division, Stuttgart, West Germany

Volume

22

Issue

21

fYear

1986

Firstpage

1144

Lastpage

1145

Abstract

High-performance distributed feedback (DFB) double-channel planar buried-heterostructure (DCPBH) lasers (λ=1.3 μm) with a modulation bandwidth as high as 5GHz are reported. The frequency response of these InGaAsP/InP lasers is improved by formation of a double-channel (DC) DCPBH structure with a 20 μm-wide mesa. Threshold currents range between 17 mA and 35mA. Sigle-mode operation is observed over a temperature range of 100 K with a sidemode suppression of better than 36 dB at 25°C.

Keywords

III-V semiconductors; distributed feedback lasers; frequency response; laser transitions; optical communication equipment; semiconductor junction lasers; -30 degrees C to 70 degrees C; -30 to 70 degC; 1.3 micron; 1.3 micron wavelength; 17 to 35 mA; 5 GHz; 5 GHz bandwidth; DFB laser; III-V semiconductors; InGaAsP-InP; InGaAsP/InP; distributed feedback; double-channel; frequency response; high-speed operation; modified DCPBH structure; optical communication equipment; planar buried-heterostructure; semiconductor lasers; single-mode operation;

fLanguage

English

Journal_Title

Electronics Letters

Publisher

iet

ISSN

0013-5194

Type

jour

DOI

10.1049/el:19860784

Filename

4256999