DocumentCode
1027105
Title
Low-threshold ridge waveguide lasers at λ = 1.5 μm
Author
Armistead, C.J. ; Wheeler, S.A. ; Plumb, R.G. ; Musk, R.W.
Author_Institution
STC Technology Limited, Harlow, UK
Volume
22
Issue
21
fYear
1986
Firstpage
1145
Lastpage
1146
Abstract
Ridge waveguide lasers at 1.5 μm wavelength have been fabricated by liquid-phase epitaxy with CW thresholds of 18 mA at 20°C, single transverse mode operation to 25 mW and quantum efficiencies over 20% per facet. Thresholds have increased by less than 2 mA in 10000 h for devices maintained at 5 mW output and 50°C. Packaged devices with single-mode fibre tails have shown excellent performance in systems trials at 2.4 Gbit/s.
Keywords
III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; laser modes; laser transitions; liquid phase epitaxial growth; optical communication equipment; optical waveguides; semiconductor junction lasers; 1.5 micron wavelength; 18 mA CW threshold current; 2.4 Gbit/s; 20% quantum efficiency; 25 mW power output; III-V semiconductors; InGaAsP-InP; LPE; liquid-phase epitaxy; optical communication equipment; packaged devices; ridge waveguide lasers; semiconductor lasers; single transverse mode operation; single-mode fibre tails;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19860785
Filename
4257000
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