Title :
InGaAs/InAlGaAs hot-electron transistors with current gain of 15
Author :
Imamura, Kousuke ; Muto, Salvatore ; Fujii, Teruya ; Yokoyama, Naoki ; Hiyamizu, S. ; Shibatomi, A.
Author_Institution :
Fujitsu Limited, Atsugi, Japan
Abstract :
Hot-electron transistors (HETs) using an InGaAs/InAlGaAs heterostructure have been fabricated for the first time. The base layer thickness (base width) was 1000 Ã…,500 Ã… or 250 Ã…. The common-emitter current gain was measured at about 15 at 77 K for the 250 Ã… base HETs, which is, to the authors´ knowledge, the highest value ever reported.
Keywords :
III-V semiconductors; aluminium compounds; bipolar transistors; gallium arsenide; hot carriers; indium compounds; 1000 angstroms; 15 current gain; 250 angstroms base; 250 to 1000 angstrom; 500 angstroms; 77 K; 77K; HETs; III-V semiconductors; InGaAs-InAlGaAs; InGaAs/InAlGaAs; base layer thickness; bipolar transistors; heterostructure; hot-electron transistors;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19860787
